HORIZONTAL HIGH-VOLTAGE INTEGRATED ELEMENT HAVING TRENCH INSULATION FIELD PLATE AND METAL FIELD PLATE

摘要

The present invention relates to a horizontal high-voltage integrated element capable of improving breakdown voltage characteristics and on-resistance characteristics thereof by having a trench insulation field plate and a metal field plate. The high-voltage integrated element comprises: a source area and a drain area disposed to be spaced apart from each other on a semiconductor layer; a drift area disposed on the semiconductor layer to surround the drain area; a channel area disposed between the source area and the drift area; a trench insulation field plate disposed in the drift area while having a predetermined depth of recess; a metal field plate disposed on the trench insulation field plate and having a lower part disposed to fill the recess; a gate insulation layer disposed on a part of the channel area, the drift area, and the trench insulation plate; and a gate electrode layer disposed on the gate insulation layer.;COPYRIGHT KIPO 2017