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Additive for reducing voids after annealing of copper plating with through silicon via
Additive for reducing voids after annealing of copper plating with through silicon via
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机译:减少硅通孔镀铜退火后空隙的添加剂
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摘要
An additive for reducing voids after annealing of copper plating with through silicon via. The additive contains by weight percent: 0.05-1% of one or more of quaternized polyethylene imine and derivatives thereof having different molecular weights, and 1-10% of polyethylene glycol with an average molecular weight of 200-20000. The additive is used in combination with an electroplating solution of a copper methyl sulfonate system. The electroplating solution of a copper methyl sulfonate system contains 1-5 ml/L of the additive by volume ratio. The electroplating solution of a copper methyl sulfonate system contains by mass volume ratio: 50-110 g/L of copper ions, 5-50 g/L of methanesulfonic acid and 20-80 mg/L of chlorine ions. The electroplating solution also contains by volume ratio: 0.5-5 ml/L of accelerator, 5-20 ml/L of inhibitor and 5-10 ml/L of levelling agent. The additive for reducing voids after annealing of copper plating with through silicon via provided in the present invention can solve the problem of micro-voids between grain boundaries after high temperature annealing of copper plating.
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