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Semiconductor device and method for producing same having multilayer wiring structure with contact hole having hydrophobic film formed on side surface of the contact hole
Semiconductor device and method for producing same having multilayer wiring structure with contact hole having hydrophobic film formed on side surface of the contact hole
A method of producing a semiconductor device includes forming an insulating film on a substrate on which a semiconductor layer is formed; removing a part of the insulating film by etching to form an opening in the insulating film; supplying steam with a temperature greater than or equal to 200° C. and less than or equal to 600° C. to the opening formed in the insulating film; after supplying the steam, applying a solution including a silicon compound to a side surface of the insulating film defining the opening; and forming a hydrophobic film on the side surface of the insulating film defining the opening by polymerizing the silicon compound.
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