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Semiconductor device with alternating conductivity type layers having different vertical impurity concentration profiles
Semiconductor device with alternating conductivity type layers having different vertical impurity concentration profiles
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机译:具有具有不同垂直杂质浓度分布的交替导电类型层的半导体器件
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摘要
A power semiconductor device is disclosed, which comprises a semiconductor layer including a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type, which are periodically formed in the lateral direction, and a power semiconductor element including the semiconductor layers that are formed periodically, wherein a distribution of an amount of an impurity in a vertical direction of the first semiconductor layer differs from a distribution of an amount of an impurity in the vertical direction of the second semiconductor layer.
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