首页>
外国专利>
Semiconductor-on-insulator lateral heterojunction bipolar transistor having epitaxially grown intrinsic base and deposited extrinsic base
Semiconductor-on-insulator lateral heterojunction bipolar transistor having epitaxially grown intrinsic base and deposited extrinsic base
展开▼
机译:具有外延生长的本征基极和沉积的本征基极的绝缘体上半导体横向异质结双极晶体管
展开▼
页面导航
摘要
著录项
相似文献
摘要
After forming a trench extending through an insulator layer and an underlying top semiconductor portion that is comprised of a first semiconductor material and a dopant of a first conductivity type to define an emitter and a collector on opposite sides of the trench in the top semiconductor portion, an intrinsic base comprising a second semiconductor material having a bandgap less than a bandgap of the first semiconductor material and a dopant of a second conductivity type opposite the first conductivity type is formed in a lower portion the trench by selective epitaxial growth. The intrinsic base protrudes above the top semiconductor portion and is laterally surrounded by entire top semiconductor portion and a portion of the insulator layer. An extrinsic base is then formed on top of the intrinsic base to fill a remaining volume of the trench by a deposition process.
展开▼