METHOD OF OBTAINING NANOSIZED THIN FILMS OF ZnO WITH CONTROLED ORIENTATION

摘要

The invention relates to the obtaining of thin nanosized films of ZnO, which have a number of industrial applications in optics and electronics, such as magneto-optical instruments, chemical sensors, hybrid solar cells, thin-film transistors, ultraviolet radiators, etc. The preferentially-oriented crystallite films are preferred for applications in areas where crystallographic anisotropy is required, such as shortwave semiconductor diode lasers, piezoelectric transducers, and the like. The proposed method allows for production of thin, nanosized films of ZnO with controlled growth along direction (002) or (100). It consists of dusting the zinc-ammonia precursor using ultrasound and its depositing on a heated substrate. By changing the composition of the solution and the temperature of the substrate, a controlled change in the crystallographic orientation of ZnO is carried out. The final crystallization of the layer is accomplished by additional thermal heating in air.