Method for spatial shaping GaN substrates in order to obtain laser diodes of high efficiency

摘要

the object of the application is a way of ground surface gan, allowing to obtain an improved structure of a laser diode. this light emission krawu0119dziowej, constructed on a substrate (1) with monokrystalicznego gallium nitride gan oriented surface 0001.on a substrate that is made of layers of layered structure, epitaksjalne gan, algan, ingan, allngan, undoped, doped or doped si mg. according to this notification, in contrast to the typical structure, described diode laser has mesa structure. provided are the mechanisms for reducing radiation, electric current and diffusion medium.