According to one embodiment of the present invention, an electrochemical migration preventive additive can suppress electrochemical migration by delaying or preventing the generation or the growth of a dendrite generated between copper metal wirings. Therefore, shorting of a circuit can be ultimately prevented. In addition, when the preventive additive is used by being mixed with an EMC or underfill material of a packaging process of a semiconductor and the like, the reliability of a semiconductor device can be increased.
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