The present invention makes it possible to measure a correct inclined state with an electron microscope device, even if the contour of the bottom of a hole in a semiconductor pattern is blocked by a sample surface. This electron microscope device is provided with: a first detection means disposed at a high elevation angle for detecting electrons having relatively low energy; a second detection means disposed at a low elevation angle for detecting electrons having relatively high energy; a means for identifying, from a first image obtained from a first detector, a hole region in a semiconductor pattern within a preset region; a means for calculating for individual holes, from a second image obtained from a second detector, an inclined orientation and an index pertaining to an inclination angle, on the basis of the distance between the outer periphery of the hole region and the hole bottom that has been detected in the direction of the hole center from the outer periphery; and a means for calculating, from the results measured for the individual holes included in an image being measured, an inclined orientation of the hole and an index pertaining to an inclination angle of the hole as representative values for the image being measured.
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