Semiconductor Measurement Technology:Notes on SEM (Scanning Electron Microscope) Examination of Microelectronic Devices.

摘要

The report reviews selected scanning electron microscope (SEM) techniques which are appropriate for the examination of microelectronic devices. Illustrated are the results of individual variations in SEM operating parameters such as accelerating voltage,specimen tilt,scan line time,and frame time. Techniques which use secondary and backscattered electron emissions are compared and electron-beam-induced current and voltage contrast modes are discussed. Specimen preparation and beam-induced charging artifacts are also discussed. This report demonstrates the need for flexibility in selecting and using SEM parameters and analytic procedures to obtain the maximum information when examining semiconductor devices.