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cBN MOLDING AND METHOD FOR MANUFACTURING cBN FILM

机译:立方氮化硼成型及其制造方法

摘要

[Problem] To provide a cBN molding and a method for manufacturing a cBN film whereby a cBN film having high adhesion between a base material and the cBN film is formed with high efficiency. [Solution] A method for manufacturing a cBN film has a boron layer forming step for forming a boron layer 130 on a substrate 110, a mixed layer forming step for forming a mixed layer 140 containing boron atoms and nitrogen atoms on the boron layer 130, and a cBN film forming step for forming a cBN film 150 on the mixed layer 140. In the boron layer forming step, the mixed layer forming step, and the cBN film forming step, film formation is performed in a state in which a plasma is generated. In the mixed layer forming step, a noble gas, nitrogen gas, and a gas including boron atoms are supplied to the substrate 110. The flow rate of nitrogen gas is increased while the combined total of the flow rate of nitrogen gas and the flow rate of the noble gas is held constant, and a mixed layer 140 in which the ratio of nitrogen atoms increases progressively away from the substrate 110 is formed.
机译:[问题]提供一种cBN成型体和制造cBN膜的方法,由此以高效率形成在基材和cBN膜之间具有高粘附性的cBN膜。 [解决方案] cBN膜的制造方法包括:在基板110上形成用于形成硼层130的硼层形成步骤,用于在硼层130上形成包含硼原子和氮原子的混合层140的混合层形成步骤,以及在混合层140上形成cBN膜150的cBN膜形成步骤。在硼层形成步骤,混合层形成步骤和cBN膜形成步骤中,在等离子体为等离子体的状态下进行膜形成。产生。在混合层形成步骤中,将稀有气体,氮气和包含硼原子的气体提供给基板110。增加氮气的流量,同时将氮气的流量和流量的总和合计。使稀有气体中的N 2保持恒定,并形成其中氮原子的比例远离衬底110逐渐增加的混合层140。

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