cBN Synthesis Method of cBN thin film

摘要

The present invention relates to a method to synthesize cubic boron nitride (cBN) thin film. According to one embodiment of the present invention, the method to synthesize a cBN thin film comprises: a first step of polishing a silica substrate cleaned by acetone and distilled water with diamond having a size of 60 to 70 μm for one hour by an ultrasonic cleaner to form a nuclei; a second step of depositing a hexagonal boron nitride (hBN) thin film on the substrate at 550 to 650 deg. C for 4 to 5 hours under an atmosphere of Ar 25 cm^3/min and N_2 10 cm^3/min; a third step of heat-treating the deposited substrate at 1,300 to 1,400 deg. C for 1.5 to 2.5 hours under atmosphere of Ar 15 cm^3/min; a fourth step of maintaining the substrate for two hours to form the cBN thin film; and a fifth step of cooling the cBN thin film at 23 to 26 deg. C. Accordingly, wearing resistance of a wearing resistant part, such as cutting and molding tools, is improved regardless of the shape of the tool.