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DECOUPLING CAPACITOR WITH METAL PROGRAMMABLE KNEE FREQUENCY
DECOUPLING CAPACITOR WITH METAL PROGRAMMABLE KNEE FREQUENCY
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机译:用金属可编程拐点频率解耦电容器
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摘要
A MOS IC includes pMOS transistors, each having a pMOS transistor drain, source, and gate. Each pMOS transistor gate extends in a first direction and is coupled to other pMOS transistor gates. Each pMOS transistor source/drain are coupled to a first voltage source. The MOS IC further includes a first metal interconnect (310) extending over the pMOS transistors. The first metal interconnect has first (312) and second (314) ends. The first metal interconnect is coupled to each pMOS transistor gate and is coupled to a second voltage source less than the first voltage source. One of each pMOS transistor gate or the second voltage source is coupled to the first metal interconnect through at least one tap point (316) located between the first and second ends. The pMOS transistors and the first metal interconnect function as a decoupling capacitor.
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机译:MOS IC包括pMOS晶体管,每个晶体管都具有pMOS晶体管的漏极,源极和栅极。每个pMOS晶体管栅极在第一方向上延伸并且耦合到其他pMOS晶体管栅极。每个pMOS晶体管的源极/漏极耦合到第一电压源。 MOS IC还包括在pMOS晶体管上方延伸的第一金属互连(310)。第一金属互连具有第一端(312)和第二端(314)。第一金属互连耦合到每个pMOS晶体管栅极,并且耦合到小于第一电压源的第二电压源。每个pMOS晶体管栅极或第二电压源中的一个通过位于第一和第二端之间的至少一个抽头点(316)耦合到第一金属互连。 pMOS晶体管和第一金属互连件用作去耦电容器。
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