MEMORY DEVICE ACCESSED ON BASIS OF DATA LOCALITY AND ELECTRONIC SYSTEM INCLUDING SAME

摘要

A memory device comprises a memory cell array, a row decoder, a multiplex column decoder, a gating circuit, and an input/output data driving circuit. The memory cell array comprises a plurality of memory cells arranged in a plurality of rows and a plurality of columns. The row decoder generates a row selection signal for selecting a target row among a plurality of rows on the basis of a row address. The multiplex column decoder generates a multiplex column selection signal for simultaneously selecting a plurality of target columns among columns included in the target row on the basis of a column address and column selection information. The gating circuit simultaneously selects a plurality of target columns on the basis of the multiplex column selection signal. On the basis of the multiplex column selection signal and a data mask signal, the input/output data driving circuit simultaneously writes input data to a plurality of target columns through the gating circuit or simultaneously outputs, as output data, data stored in a plurality of target columns through the gating circuit. Column addresses corresponding to a plurality of target columns included in a target row are not continuous.