MEMORY DEVICE ACCESSED IN CONSIDERATION OF DATA LOCALITY AND ELECTRONIC SYSTEM INCLUDING THE SAME

摘要

A memory device includes a memory cell array, a row decoder, a multicolumn decoder, a gating circuit, and an input/output data operating circuit. The memory cell array includes a plurality of memory cells arranged to form a plurality of rows and columns. The row decoder generates a row selection signal for selecting a target row from among the rows based on a row address. The multicolumn decoder generates a multicolumn selection signal for selecting a plurality of target columns, included in the target row, at the same time based on a column address and column selection information. The gating circuit selects a plurality of target columns based on the multicolumn selection signal. The input/output data operating circuit writes input data in the target columns or outputs the data, stored in the target columns, as output data at the same time based on a data mask signal and the multicolumn selection signal.