首页> 外国专利> A method for depositing a material on a substrate, a controller for controlling a material deposition process, and a device for depositing a layer on a substrate

A method for depositing a material on a substrate, a controller for controlling a material deposition process, and a device for depositing a layer on a substrate

机译:在基板上沉积材料的方法,用于控制材料沉积过程的控制器以及在基板上沉积层的装置

摘要

The present disclosure relates to a method for depositing a material on a substrate, the method comprising moving a substrate (10) into a processing zone in a vacuum chamber having an array of at least three sputter cathodes (110, 120) Each of the at least three sputter cathodes 110,120 provides a plasma zone 116,126 in which a deposition is performed during the operation of at least three sputter cathodes 110,120 And the plasma zone 116, 126 is rotated once about the respective rotation axis 118, 128 from the first rotation position 140, 140 to the second rotation position 144, 144 Wherein each plasma zone 116,126 is oriented to depart from the processing zone at a first rotational position 140,140 where each plasma zone 116,126 is at a first rotational position 140,140, (140, 140), the first rotational position 2 while rotating in the rotational position (144, 144), it is moved over the processing area.
机译:本公开涉及一种用于在基板上沉积材料的方法,该方法包括将基板(10)移动到具有至少三个溅射阴极(110、120)的阵列的真空室中的处理区中。至少三个溅射阴极110,120提供等离子体区116,126,在该等离子体区116,126中,在至少三个溅射阴极110,120的操作期间执行沉积,并且等离子体区116,126从第一旋转位置140绕着各自的旋转轴118、128旋转一次。在步骤140中,等离子体140、140到达第二旋转位置144、144,其中每个等离子体区116,126被定向为在第一旋转位置140,140处离开处理区,其中每个等离子体区116,126在第一旋转位置140,140(140,140)处,第一旋转位置2在旋转位置(144、144)旋转时,在处理区域上移动。

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