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Method for depositing material on substrate, controller for controlling material deposition process, and apparatus for depositing layer on substrate

机译:在基板上沉积材料的方法,用于控制材料沉积过程的控制器以及在基板上沉积层的设备

摘要

The present disclosure relates to a method for depositing material on a substrate, the method comprising moving a substrate 10 into a processing zone in a vacuum chamber having an array of at least three sputter cathodes 110, 120. Each of the at least three sputter cathodes 110, 120 provides a plasma zone 116, 126, in which plasma zones 116, 126 are deposited during operation of at least three sputter cathodes 110, 120 The material is supplied, and the plasma zones 116 and 126 are rotated only once about each axis of rotation 118 and 128 from the first rotational position 140 and 140 to the second rotational position 144 and 144. Includes a step, wherein each plasma zone 116, 126 is oriented away from the processing zone at the first rotational position 140, 140, where each plasma zone 116, 126 Moves across the processing zone while rotating from the first rotational position 140, 140 to the second rotational position 144, 144.
机译:本发明涉及一种用于在衬底上沉积材料的方法,该方法包括将衬底10移动到具有至少三个溅射阴极110、120的阵列的真空室中的处理区中。至少三个溅射阴极中的每个阴极110、120提供等离子体区116、126,其中在至少三个溅射阴极110、120的操作期间沉积等离子体区116、126。提供材料,并且等离子体区116和126仅绕每个轴旋转一次。从第一旋转位置140和140旋转到第二旋转位置144和144的旋转角度118.包括一个步骤,其中每个等离子区116、126在第一旋转位置140、140处都背离处理区。每个等离子体区域116、126在从第一旋转位置140、140旋转到第二旋转位置144、144的同时在整个处理区域上移动。

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