Resistive Memory Device Having Schottky Diode and Method of Manufacturing The Same

摘要

A Schottky diode, a resistive memory device containing the same, and a manufacturing method thereof are disclosed. The resistive memory device of the present invention includes a word line containing semiconductor substrate, a Schottky diode formed on the word line, and a storage layer formed on the Schottky diode, wherein the Schottky diode comprises a first semiconductor layer A conductive layer formed on the first semiconductor layer and having a lower work function than the first semiconductor layer, and a second semiconductor layer formed on the conductive layer.