- Structures and devices including germanium-tin films and methods of forming same

摘要

Methods of forming germanium-tin films using germanium as a precursor are disclosed. Exemplary methods include a step of growing films including germanium and tin in an epitaxial chemical vapor deposition reactor. The ratio of tin precursor to germanium is less than 0.1. Structures and elements including germanium-tin films formed using the methods described in the present invention are also disclosed. It is possible to provide improved processes for forming crystalline films including GeSn.