A gas-phase etch in accordance with a controllable etch selectivity of a silicon-containing antireflective coating or silicon oxynitride to another film or mask

摘要

A method for dry removal of a material on a microelectronic workpiece is described. The method includes the steps of (1) receiving a workpiece having a surface that exposes a target layer comprised of (1) an organic material or (2) both oxygen and nitrogen, and silicon, and selectively removing at least a portion of the target layer . Wherein the selective removal includes exposing the surface of the workpiece to a chemical environment at a first set point temperature that includes N, H, and F to chemically change the surface area of the target layer, And raising the temperature of the workpiece to a second set point temperature to remove the chemically treated surface area of the target layer.;