-GO - METAL-GO CORE-SHELL COMPOSITE NANO STRUCTURE NON-VOLATILE RESISTIVE RANDOM-ACCESS MEMORY DEVICE INCLUDING THEREOF AND METHOD OF PREPARING THE MEMORY DEVICE

摘要

The present invention relates to a metal-GO core-shell composite nano-structure, a non-volatile resistive switching memory device including the metal-GO core-shell composite nano-structure, and a manufacturing method of the memory device. The metal-GO core-shell composite nano-structure comprises: a metal core; and a shell of a plurality of graphene oxide sheets wrapped on the metal core. Therefore, the non-volatile resistive switching memory device can have a simple structure.