METHODS OF FORMING A SEMICONDUCTOR DEVICE STRUCTURE INCLUDING A STAIR STEP STRUCTURE AND RELATED SEMICONDUCTOR DEVICES

摘要

The present invention relates to a method of forming a semiconductor device structure, which comprises the steps of: forming a stack structure which includes layers, each independently including a sacrificial structure and an insulating structure longitudinally adjacent to the sacrificial structure, on a substrate; forming a masking structure on a portion of the stack structure; forming a photoresist on the masking structure and on additional portions of the structure which are not covered by the masking structure; and allowing the photoresist and the stack structure to undergo a series of material removal processes to form a stair step structure by selectively removing portions of the photoresist and portions of the stack structure which are not covered by at least one of the masking structure and the remaining portions of the photoresist. A semiconductor device and an additional method of forming a semiconductor device structure are also described.