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METHODS OF FORMING A SEMICONDUCTOR DEVICE STRUCTURE INCLUDING A STAIR STEP STRUCTURE AND RELATED SEMICONDUCTOR DEVICES

机译:形成包括阶梯结构和相关的半导体器件的半导体器件结构的方法

摘要

A method of forming a semiconductor device structure includes forming a stack structure over a substrate, the stack structure comprising layers that each independently include a sacrificial structure and an insulating structure longitudinally adjacent to the sacrificial structure. The masking structure is formed over a portion of the stack structure. The photoresist is formed over the masking structure and over an additional portion of the stack structure not covered by the masking structure. The photoresist and stack structure may be a series of layers to selectively remove portions of the photoresist and portions of the stack structure not covered by the one or more masking structures, leaving a remainder of the photoresist to form a step step structure. Undergo a material removal process. Semiconductor devices and additional methods of forming semiconductor device structures are also described.
机译:形成半导体器件结构的方法包括在衬底上方形成堆叠结构,该堆叠结构包括各自独立地包括牺牲结构和在纵向上与牺牲结构相邻的绝缘结构的层。掩模结构形成在堆叠结构的一部分上。光致抗蚀剂形成在掩模结构上方和堆叠结构的未被掩模结构覆盖的另外部分上方。光致抗蚀剂和堆叠结构可以是一系列层,以选择性地去除光致抗蚀剂的部分和未被一个或多个掩模结构覆盖的堆叠结构的部分,从而留下光致抗蚀剂的其余部分以形成阶梯结构。进行材料去除过程。还描述了半导体器件和形成半导体器件结构的附加方法。

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