Ti-Ta alloy sputtering target and manufacturing method thereof

摘要

A Ti-Ta alloy sputtering target characterized in that the sputtering target contains 0.1 to 30 at% of Ta and the balance of Ti and inevitable impurities and has an oxygen content of 400 wt ppm or less. INDUSTRIAL APPLICABILITY The present invention has an excellent effect of suppressing the generation of particles at the time of sputtering because it has a low oxygen content and a low hardness and is easy to process and has good surface properties.