Ti-Ta ALLOY SPUTTERING TARGET AND PRODUCTION METHOD THEREFOR

摘要

A Ti-Ta alloy sputtering target containing 0.1 to 30 at% of Ta, and remainder being Ti and unavoidable impurities, wherein the Ti-Ta alloy sputtering target has an oxygen content of 400 wtppm or less. The present invention has a favorable surface texture with a low oxygen content and is readily processable due to its low hardness, and therefore the present invention yields a superior effect of being able to suppress the generation of particles during sputtering.