SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SAME, SEMICONDUCTOR DEVICE PACKAGE, AND OBJECT DETECTION APPARATUS

摘要

The present invention relates to a semiconductor device, a semiconductor manufacturing method, a semiconductor device package, and an object detection apparatus. According to an embodiment of the present invention, the semiconductor device may comprise a plurality of light emitting structures, first electrodes arranged around the light emitting structures, second electrodes arranged on upper sides of the light emitting structures, a first bonding pad electrically joined to the first electrodes, and a second bonding pad electrically joined to the second electrodes. The light emitting structures may comprise a first light emitting structure comprising a first DBR layer of a first conductivity type, a first active layer arranged on the first DBR layer, and a second DBR layer of a second conductivity type arranged on the first active layer; and a second light emitting structure comprising a third DBR layer of the first conductivity type, a second active layer arranged on the third DBR layer, and a fourth DBR layer of the second conductivity type arranged on the second active layer. The first electrode is electrically connected to the first and third DBR layers and may be arranged between the first light emitting structure and the second light emitting structure. The second electrode is electrically connected to the second and fourth DBR layers and may be arranged on upper sides of the second DBR layer and the fourth DBR layer. The first bonding pad is arranged on the second light emitting structure and is electrically connected to the first electrode. The second bonding pad is arranged on the first light emitting structure and may be electrically connected to the second electrode. The semiconductor device has excellent heat dissipation properties.;COPYRIGHT KIPO 2018