Hydrogen Plasma Based Cleaning Process for Etching Hardware

摘要

The present disclosure provides methods for cleaning chamber components after substrate etching. In one example, a method for cleaning includes activating an etching gas mixture using a plasma to produce an activated etching gas mixture, the etching gas mixture comprising a hydrogen containing precursor and a fluorine containing precursor; And transferring the activated etching gas mixture to a process region of the process chamber, the process chamber having an edge ring positioned therein, wherein the edge ring comprises a catalyst and an anti-catalytic material, Remove the material.;