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HYDROGEN PLASMA BASED CLEANING PROCESS FOR ETCH HARDWARE
HYDROGEN PLASMA BASED CLEANING PROCESS FOR ETCH HARDWARE
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机译:基于氢等离子体的蚀刻硬件清洗过程
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摘要
The present disclosure provides methods for cleaning chamber components post substrate etching. In one example, a method for cleaning includes activating an etching gas mixture using a plasma to create an activated etching gas mixture, the etching gas mixture comprising hydrogen-containing precursor and a fluorine-containing precursor and delivering the activated etching gas mixture to a processing region of a process chamber, the process chamber having an edge ring positioned therein, the edge ring comprising a catalyst and anticatalytic material, wherein the activated gas removes the anticatalytic material from the edge ring.
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