Optimized channel implant for a semiconductor device and method of forming same

摘要

A semiconductor device includes a substrate, a plurality of polysilicon portions formed on the substrate and spaced apart from one another, a plurality of source / drain regions formed in the substrate between adjacent polysilicon portions of the plurality of polysilicon portions, And a dielectric layer formed on the plurality of source / drain regions, the dielectric layer including a cavity filled with a conductive material to form a contact region, wherein the contact region is formed of a material selected from the group consisting of one of the plurality of source / Drain region of the contact region and a portion of the polysilicon portion of one of the adjacent polysilicon portions to electrically connect the one polysilicon portion and the one source / A portion extending below an upper surface of the substrate, Contacts the agarose / drain regions and the same doped implant region. The implant region is located next to the one source / drain region and includes a portion of the channel region located within the substrate below the one polysilicon portion.