METHOD OF CONTROLLING SOLID PHASE DIFFUSION OF BORON DOPANTS TO FORM ULTRA-SHALLOW DOPING REGIONS

摘要

The method for forming an ultra-thin boron-doped region in a semiconductor device is provided. Method, boron nitride, boron oxynitride layer, silicon nitride layer, or a silicon-depositing a diffusion filter layer containing an oxynitride layer on a substrate, and boron oxide, boron oxynitride, or a boron-containing combination and a step of forming a dopant layer over the diffusion filter layer, on the condition that the diffusion filter layer and the boron dopant layer does not comprise the same material. Such a method, by controlling the diffusion of boron into the substrate through the diffusion filter layer from a boron dopant layer, and a step of heat treating the substrate to form an ultra-thin boron dopant region in the substrate further.;