Thermoelectric Device Based on Silicon Nanowires and Manufacturing Method Thereof

摘要

The present invention relates to a silicon nanowire-based thermoelectric device and a method of manufacturing the same. A silicon heat sink for absorbing heat, a silicon nanowire leg for transferring heat, and a heat sink for emitting heat; And at least one hole-containing insulating film formed on the substrate including the silicon heat absorbing portion, the silicon nanowire leg, and the silicon heat releasing portion.;