首页> 外文OA文献 >Monolithically integrated thermoelectric energy harvester based on silicon nanowire arrays for powering micro/nanodevices
【2h】

Monolithically integrated thermoelectric energy harvester based on silicon nanowire arrays for powering micro/nanodevices

机译:基于硅纳米线阵列的单片集成热电能量采集器,用于为微型/纳米器件供电

摘要

One-dimensional (1D) nanowire structures have been shown to be promising candidates for enhancing the thermoelectric properties of semiconductor materials. This paper goes beyond single nanowire characterization and reports on the implementation of multiple electrically connected dense arrays of well-oriented and size-controlled silicon nanowires (Si NWs) grown by the CVD-VLS mechanism into microfabricated structures to develop thermoelectric microgenerators (οTEGs). Low thermal mass suspended silicon structures have been designed and microfabricated to naturally generate thermal gradients in planar microthermoelements. The hot and cold parts of the device are linked with horizontal arrays of Si NWs growth by a single bottom-up process. In order to improve the performance of the device as energy harvester, the successive linkage of multiple Si NW arrays has been developed to generate larger temperature differences while preserving a good electrical contact that allows keeping small internal thermoelement resistances. The fabricated thermoelements have shown Seebeck voltages up to 60mV and generated power densities up to 1.44mW/cm 2 for ΔT=300°C and, working as energy harvesters, a maximum Seebeck voltage of 4.4mV and a generated power density of 9οW/cm 2 for ΔT=27°C (across the nanowires) in a single thermoelement. The fabricated microgenerator, taking advantage of the simple planar geometry and compatibility with silicon technology, provides an alternative to the state-of-the-art οTEGs based on non-integrable and scarce V-VI semiconductor materials and a promising energy harvester for advanced micro/nanosystems. © 2012 Elsevier Ltd.
机译:一维(1D)纳米线结构已被证明是增强半导体材料热电性能的有前途的候选物。本文超越了单个纳米线的表征范围,并报告了由CVD-VLS机制成长为取向良好且尺寸可控的硅纳米线(Si NWs)的多个电连接密集阵列的实现,以形成微细结构以发展热电微型发电机(ÎTEGs)。 )。低热质量的悬浮硅结构已经过设计和微制造,可以自然地在平面微热元件中产生热梯度。器件的热和冷部分通过一个自下而上的过程与Si NWs生长的水平阵列相连。为了提高该设备作为能量收集器的性能,已开发了多个Si NW阵列的连续链接,以产生较大的温差,同时保留良好的电接触,从而保持较小的内部热电偶电阻。预制的热电元件显示出高达60mV的塞贝克电压,对于T = 300°C产生的功率密度高达1.44mW / cm 2,并且作为能量收集器,最大塞贝克电压为4.4mV,产生的功率密度为9η在单个热电偶中,ΔT= 27°C(跨纳米线)的W / cm 2。利用简单的平面几何形状和与硅技术的兼容性,制造的微型发电机可替代基于不可集成和稀缺的V-VI半导体材料和有前途的能量收集器的最新技术的TEG。先进的微/纳米系统。 ©2012爱思唯尔有限公司。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号