/ PROCESS FOR CHEMICALLY MECHANICALLY POLISHING SUBSTRATES CONTAINING SILICON OXIDE DIELECTRIC FILMS AND POLYSILICON AND/OR SILICON NITRIDE FILMS

摘要

CMP method of a substrate containing a silicon oxide dielectric film and a polysilicon and / or silicon nitride film, comprising the steps of:(1) contacting the substrate with an aqueous polishing composition comprising: (A) abrasive particles positively charged when dispersed in an aqueous medium having a pH in the range of 3 to 9; (B) water-soluble or water-dispersible linear or branched alkylene oxide homopolymers and copolymers; And (C) (c1) aliphatic and cycloaliphatic poly (N-vinylamide) homopolymers and copolymers, (c2)₂C = C (-R)-C (= O)-N (-R^One) (-R²) (I), H₂C = C (-R)-C (= O)-R³(II) wherein the variables have the following meanings: R is a hydrogen atom, a fluorine atom, a chlorine atom, a nitrile group, or an organic residue; R^OneAnd R²Is a hydrogen atom or an organic residue; R³/RTI is a saturated N-heterocyclic ring; (c3) a cationic polymer flocculant; And (c4) mixtures thereof;(2) removing the silicon oxide dielectric film and polishing the substrate until the polysilicon and / or silicon nitride film is exposed.