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The high band gap tunnel knot of the Type II of InP lattice constants for multijunction solar cell
The high band gap tunnel knot of the Type II of InP lattice constants for multijunction solar cell
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机译:多结太阳能电池InP晶格常数II型的高带隙隧道结
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摘要
A kind of type-II tunnel knots disclose AlGaInAs tunnel layers and a N-shaped InP tunnel layer including p doping. Solar battery is further disclosed that in conjunction with tunnel knot photovoltaic subelement between high band gap type-II.
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