. After this, by differentiating cumulative structure function CTΣ(RTΣ) reveal areas of its sharp growth and determine components of thermal resistance of high-power semiconductor devices.;EFFECT: increased accuracy.;1 cl, 4 dwg"/>
METHOD OF MEASURING COMPONENT OF THERMAL RESISTANCE OF POWERFUL SEMICONDUCTOR INSTRUMENTS
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METHOD OF MEASURING COMPONENT OF THERMAL RESISTANCE OF POWERFUL SEMICONDUCTOR INSTRUMENTS
METHOD OF MEASURING COMPONENT OF THERMAL RESISTANCE OF POWERFUL SEMICONDUCTOR INSTRUMENTS
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机译：功率半导体仪表热阻的测量方法
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摘要
FIELD: electricity; measurement technology.;SUBSTANCE: invention relates to technique for measuring thermophysical parameters of semiconductor devices and can be used to monitor their quality. For this, method consists in passing through powerful semiconductor device a sequence of N pulses of heating current of given amplitude Igr, duration of which is increased by logarithmic law. For each i-th current pulse, based on the measurement of temperature-sensitive parameter UTSP determine temperatures of p-n slope Tj(ti) and Tj(ti+1) before and after formation of i-th current pulse, respectively, and also measure voltage drop Ugr on the object while passing current pulse through it. Then, cumulative structure function CTΣ(RTΣ) is calculated by the formulas: . After this, by differentiating cumulative structure function CTΣ(RTΣ) reveal areas of its sharp growth and determine components of thermal resistance of high-power semiconductor devices.;EFFECT: increased accuracy.;1 cl, 4 dwg
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机译：领域：电力;测量技术：本发明涉及用于测量半导体器件的热物理参数的技术，并且可以用于监测其质量。为此，该方法包括使N个加热电流脉冲序列通过给定幅度I gr 的强大的半导体器件，其持续时间根据对数律而增加。对于每个第i个电流脉冲，基于对温度敏感的参数U TSP 的测量，确定pn斜率T j （t i ）和T j （t i + 1 ）分别在第i个电流脉冲形成之前和之后，并测量电压降U gr ，同时使电流脉冲通过对象。然后，通过以下公式计算累积结构函数C TΣ（R TΣ）：。此后，通过微分累积结构函数C TΣ（R TΣ）揭示其急剧增长的区域并确定大功率半导体器件的热阻成分。精度更高;; 1 cl，4 dwg
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