Semiconductor manufacturing process with height control through an active region profile and semiconductor manufacturing system

摘要

Method, comprising in sequence: Forming a trench (225) on a semiconductor substrate (210) defining active fin regions (230); Extracting a profile of the fin active regions (230); Determining an etch dosage dependent on the profile of the fin active regions (230); Filling the trench (225) with a dielectric (240); and Performing an etch process on the dielectric (240) using the determined etch dosage, thereby recessing the dielectric (240) and defining a fin height of the fin active regions (230).