III-V TYPE MULTI-JUNCTION PHOTOVOLTAIC CELL WITH SILICON SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME

摘要

Multi-junction photovoltaic cell comprising: - a substrate (20) of monocrystalline silicon; a buffer layer (30) of III-V alloy comprising at least aluminum and antimony deposited epitaxially above said substrate; and an active heterostructure deposited by epitaxy above said buffer layer, formed of at least two different alloys chosen from the families AIGalnAs and GalnAsP having mesh parameters adapted to each other and to that of the buffer layer and comprising at least two stacked PN junctions (41, 42, 43) having different bandgap widths. Method of manufacturing such a photovoltaic cell