DEVICE PERFORMANCE IMPROVEMENT USING BACKSIDE METALLIZATION IN A LAYER TRANSFER PROCESS

摘要

A silicon-on-insulator (SOI) device includes an active layer including active, devices, such as transistors. Below the active layer is an insulating layer, e.g., an SOI buried oxide layer (BOX), and below the BOX layer, one or more metal layers. The metal layer adjacent the BOX layer includes at least one metal region positioned below a corresponding active device, e.g., the channel region or diffusion region of the transistor. The metal region, during operation of the device, may act as a heat sink for the active device or may be biased to improve the performance of the active device.