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Improvement in top-gate MoS2 transistor performance due to high quality backside Al2O3 layer

机译：高质量的背面Al2O3层提高了顶栅MoS2晶体管的性能

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Bolshakov Pavel; Zhao Peng; Azcatl Angelica; Hurley Paul K.; Wallace Robert M.; Young Chadwin D.;
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年度 2017
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1. Improvement in top-gate MoS_2 transistor performance due to high quality backside AI_2O_3 layer [J] . Pavel Bolshakov, Peng Zhao, Angelica Azcatl, Applied Physics Letters . 2017,第3期

机译：高质量的背面AI_2O_3层提高了顶栅MoS_2晶体管的性能
2. Performance enhancement of monolayer MoS2 transistors by atomic layer deposition of high-k dielectric assisted by Al2O3 seed layer [J] . Journal of Physics, D. Applied Physics: A Europhysics Journal . 2020,第10期

机译：通过Al2O3种子层辅助高k电介质的原子层沉积性能提高单层MOS2晶体管
3. Current Enhancement and Bipolar Current Modulation of Top-Gate Transistors Based on Monolayer MoS2 on Three-Layer WxMo1-xS2 [J] . Chen Kuan-Chao, Jian Cing-Yu, Chen Yi-Jia, ACS applied materials & interfaces . 2018,第29期

机译：基于单层MOS2在三层WXMO1-XS2上的顶栅晶体管的电流增强和双极电流调制
4. Performance evaluation and optimization of single layer MoS2 double gate transistors with metallic contacts [C] . Lang Zeng, Fanghui Gong, Jiang Nan, IEEE International Nanoelectronics Conference . 2016

机译：具有金属触点的单层MoS2双栅晶体管的性能评估和优化
5. Improved Contacts and Device Performance in MoS2 Transistors Using 2D Semiconductor Interlayers [D] . Andrews, Kraig . 2020

机译：使用2D半导体层间改进MOS2晶体管中的触点和装置性能
6. Hybrid dielectrics composed of Al2O3 and phosphonic acid self-assembled monolayers for performance improvement in low voltage organic field effect transistors [O] . Sukjae Jang, Dabin Son, Sunbin Hwang, 2018

机译：由Al2O3和膦酸自组装单层组成的混合电介质可改善低压有机场效应晶体管的性能
7. Improved Electrical Performance for Multilayer MoS2 Transistors by Using a Fully Encapsulated Al2O3 Dielectric Layer [O] . Zixuan Huang 2018

机译：通过使用全封装的AL2O3介电层改善多层MOS2晶体管的电气性能

Improvement in top-gate MoS2 transistor performance due to high quality backside Al2O3 layer

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