METHOD FOR DETERMINING MINOR AND MAJOR DOPANT IMPURITY CONCENTRATIONS

摘要

The invention relates to a method for determining the concentrations of majority and minority doping impurities in a sample of semiconducting material compensated with doping impurities. This process comprises the following steps: measuring electrical resistivity values ( ρ _M , ρ _B ) of the sample at a first temperature (T _M ) and at a second temperature (T _B ), distinct from the first temperature, the first and second temperatures (T _M , T _B ) belonging to a temperature range (P3) corresponding to a charge carrier freezing regime; determining a pre-exponential factor of an Arrhenius law expressing the electrical resistivity in the charge carrier gel regime, from the electrical resistivity values ( ρ _M , ρ _B ) measured at the first and second temperatures (TM) , TB); determining a degree of compensation of the semiconductor material from the pre-exponential factor; determining the majority and minority doping impurity concentrations from the degree of compensation and from a reference value of the electrical resistivity of the sample.