SEMICONDUCTOR DEVICES COMPRISING A PINNED PHOTODIODE STRUCTURE

摘要

It can operate to demodulate incident modulated electromagnetic radiation, including semiconductor devices semiconductor devices: a pinned photodiode structure of the substrate including a first kind, it is arranged in an embeding layer of the Second Type in substrate, it is arranged in the embeding layer of first and second auxiliary of the Second Type in substrate and the embeding layer of respective adjacent Second Type, one embeding layer of the first kind being arranged in the embeding layer of Second Type is arranged and extends to the embeding layer of first and second auxiliary of Second Type, it is set in the insulator on a surface of substrate and a detection region; First and second transmission gate is set to a surface of insulator, operative so that the transmission gate in the field that generates within substrate; Second Type is arranged in first and second floating diffusion embeding layer in substrate.