首页> 外国专利> METHOD FOR CONTROLLING CONVECTION PATTERN OF SILICON MELT, METHOD FOR MANUFACTURING SILICON SINGLE CRYSTAL AND APPARATUS FOR PULLING SILICON SINGLE CRYSTAL

METHOD FOR CONTROLLING CONVECTION PATTERN OF SILICON MELT, METHOD FOR MANUFACTURING SILICON SINGLE CRYSTAL AND APPARATUS FOR PULLING SILICON SINGLE CRYSTAL

机译:硅熔体的对流模式的控制方法,硅单晶的制造方法以及硅单晶的拉拔装置

摘要

To provide a method for controlling the convection pattern of a silicon melt, capable of suppressing a variation in oxygen concentration for each silicon single crystal.SOLUTION: A method for controlling the convection pattern of a silicon melt comprises the steps of: heating a silicon melt 9 in a quartz crucible 3A using a heating part 17 having heating abilities different on both sides sandwiching a virtual line 9C passing the central axis 3C of the quartz crucible 3A when viewing the quartz crucible 3A from above in the vertical direction and parallel to the central magnetic field line 14C of a horizontal magnetic field; and applying the horizontal magnetic field to the silicon melt 9 in the rotating quartz crucible 3A and fixing the direction of convection on a plane orthogonal to the application direction of the horizontal magnetic field in the silicon melt 9 to one direction by applying a horizontal magnetic field of 0.2 tesla or more.SELECTED DRAWING: Figure 2
机译:提供一种用于控制硅熔体的对流图案的方法,该方法能够抑制每个硅单晶的氧浓度变化。解决方案:一种用于控制硅熔体的对流图案的方法包括以下步骤:加热硅熔体如图9所示,在石英坩埚3A中使用加热部分17,该加热部分在两侧上具有不同的加热能力,当从竖直方向从上方观看石英坩埚3A并平行于中心观察石英坩埚3A时,该假想线9C穿过石英坩埚3A的中心轴3C水平磁场的磁力线14C;将水平磁场施加到旋转的石英坩埚3A中的硅熔体9上,并且通过施加水平磁场将对流方向固定在与硅熔体9中的水平磁场的施加方向正交的平面上的一个方向上0.2特斯拉或更高选图:图2

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号