MANUFACTURING METHOD OF EPITAXIAL SILICON WAFER, EPITAXIAL SILICON WAFER, AND MANUFACTURING METHOD OF SOLID STATE IMAGING DEVICE

摘要

To provide a manufacturing method of epitaxial silicon wafer, capable of obtaining an epitaxial silicon wafer in which white scratch defect in a back irradiation solid state imaging device can be suppressed furthermore, while having high gettering ability.SOLUTION: A manufacturing method of epitaxial silicon wafer has a first step of irradiating the surface 10A of a silicon wafer with cluster ions 12 of CH(n=1 or 2, m=1, 2, 3, 4 or 5) generated by using a Bernas-type ion source or an IHC-type ion source, and forming a modified layer 14 of dissolved carbon and hydrogen, i.e., the constituent elements of the cluster ions 12, in the silicon wafer, and a second step of subsequently forming a silicon epitaxial layer 16 on the surface 10A. In the first process, peaks of concentration profile of carbon and hydrogen in the modified layer 14 are located, respectively, in 150-2000 nm from the surface 10A.SELECTED DRAWING: Figure 1