Method of manufacturing epitaxial silicon wafer, epitaxial silicon wafer, and method of manufacturing solid-state imaging device

摘要

The present invention provides an epitaxial silicon wafer capable of suppressing metal contamination by exhibiting a higher gettering ability, and a manufacturing method thereof. A first silicon epitaxial layer 12 on a silicon wafer 10, a first modified layer 14 formed by injecting carbon into the surface layer portion of the first silicon epitaxial layer 12, The method of manufacturing an epitaxial silicon wafer (100) having a first silicon epitaxial layer (16) on a first reforming layer (14), characterized in that after forming a second silicon epitaxial layer (16) ) to less than 2 × 10 ¹⁷ atoms / ㎤ the peak concentration of the oxygen concentration profile in, and further, the is characterized in that the oxygen concentration of the second silicon epitaxial layer (16) below the SIMS detection limit.