Epitaxial silicon wafer manufacturing method, epitaxial silicon wafer, and solid-state imaging device manufacturing method

摘要

Provided are an epitaxial silicon wafer which can reduce metal contamination by exerting higher gettering capability and a method of manufacturing the same. In a method of manufacturing an epitaxial silicon wafer which includes a silicon wafer, a first silicon epitaxial layer formed on the silicon wafer, a first modifying layer in which carbon is implanted in a surface layer portion of the first silicon epitaxial layer, and a second silicon epitaxial layer on the first modifying layer, the peak concentration of the oxygen concentration profile in the first modifying layer after formation of the second silicon epitaxial layer is set to 2×1017 atoms/cm3 or less and the oxygen concentration of the second silicon epitaxial layer is set to be equal to or less than the SIMS detection lower limit value.