Method for passivating the surface of a semiconductor material and semiconductor substrate

摘要

A method for passivating a surface (51) of a semiconductor material (50) comprises a layer stack comprising an aluminum oxide layer (52) and an outer coating (56; 66) on the surface (51) of the semiconductor material (50). (55; 65) is formed, and the aluminum oxide layer (52) and the outer coating (56; 66) are each formed by a vacuum process (10, 14; 10, 24) in the presence of a vacuum. Including. A vacuum is maintained (16) between the formation (10) of the aluminum oxide layer (52) and the formation (14, 24) of the outer coating (56; 66). Hydrogen and oxygen are supplied after the formation (10) of the aluminum oxide layer (52) and before the formation (14; 24) of the outer coating (56; 66) on the aluminum oxide layer (52). Such a semiconductor substrate (50, 60) is also provided. [Selection] Figure 2