Method for passivating a surface of a semiconductor material and semiconductor substrate

摘要

A method for passivating a surface of a semiconductor material includes forming a layer stack having an aluminum oxide layer and an outer coating on the surface of the semiconductor material. The aluminum oxide layer and the outer coating are respectively formed in vacuum processes in which a vacuum is present. The vacuum is maintained between the forming of the aluminum oxide layer and the forming of the outer coating. Hydrogen and oxygen are supplied after the forming of the aluminum oxide layer and before the forming of the outer coating. A semiconductor substrate is also provided.