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首页> 外文期刊>Photonics and Nanostructures: Fundamentals and Applications >Non-standard inversion method of ellipsometric equations for uniaxially anisotropic 2D materials on semiconductor or metallic substrates
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Non-standard inversion method of ellipsometric equations for uniaxially anisotropic 2D materials on semiconductor or metallic substrates

机译:在半导体或金属基板上的单轴各向异性2D材料的非标准反转方法

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摘要

A new analytic approach for solving the ellipsometric inversion problem for uniaxially anisotropic 2D materials has been developed. It is based on the classic point-by-point calculation method which treats the points of the spectrum independently, without correlation to other points. The method can be an efficient alternative to the common regression analysis in cases where the dispersion law of 2D materials has complex features. The important advantage of the method is that it does not require the initial guesses for anisotropic optical constants and the time taken for data processing is negligible. It is shown that the new technique is sensitive enough to determine the extraordinary dielectric constant of the monographene. The method offers significant practical interest since the anisotropic properties of 2D materials have not yet been explored.
机译:开发了一种新的分析方法,用于解决单轴各向异性2D材料的椭圆形反转问题。 它基于独立地处理光谱点的经典点计算方法,而不与其他点的相关性。 在2D材料的分散法具有复杂特征的情况下,该方法可以是常见回归分析的有效替代方案。 该方法的重要优点是它不需要对各向异性光学常数的初始猜测,并且数据处理所采取的时间可以忽略不计。 结果表明,新技术足够敏感以确定单体的非凡介电常数。 该方法提供了显着的实际兴趣,因为尚未探讨2D材料的各向异性特性。

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