METHOD AND DEVICE FOR DEPOSITING SILICON FILM OR GERMANIUM FILM OR SILICON GERMANIUM FILM

摘要

To provide a technique capable of depositing an almost completely amorphous silicon film or a germanium film or a silicon germanium film, on single crystal silicon or single crystal germanium or single crystal silicon germanium.SOLUTION: A method for depositing a silicon film or a germanium film or a silicon germanium film includes a first step of preparing a processed body having as a processed surface single crystal silicon or single crystal germanium or single crystal silicon germanium, a second step of making the processed surface of the processed body absorb halogen, and a third step of supplying material gas for depositing a silicon film or a germanium film or a silicon germanium film on the processed body, and depositing an amorphous silicon film or an amorphous germanium film or an amorphous silicon germanium film on the processed surface of the processed body.SELECTED DRAWING: Figure 1