Segregation of Phosphorus and Germanium to Grain Boundaries in Chemical Vapor Deposited Silicon-Germanium Films Determined by Scanning Transmission Electron Microscopy

摘要

The segregation of phosphorus and germanium to grain boundaries in P implanted, Si_0.87Ge_0.13 films deposited by chemical vapor deposition (CVD), was investigated using energy dispersive x-ray(EDX)micro-analysis. A quantitative analysis of the x-ray spectra obtained at grain boundaries showed that the excess amount of P varied with the crystallography of the boundary but that the segregation always followed an equilibrium process with an activation energy of 0.28eV.